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ZXMP4A16G
ABSOLUTE MAXIMUM RATING
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (V GS = -10V; T A =25°C) (b)
(V GS = -10V; T A =70°C) (b)
(V GS = -10V; T A =25°C) (a)
Pulsed Drain Current (c)
SYMBOL
V DSS
V GS
I D
I DM
LIMIT
-40
20
-6.4
-5.1
-4.6
-21
UNIT
V
V
A
A
Continuous Source Current (Body Diode)
(b)
I S
-5.2
A
Pulsed Source Current (Body Diode)(c)
Power Dissipation at T A =25°C (a)
Linear Derating Factor
Power Dissipation at T A =25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
I SM
P D
P D
T j :T stg
-21
2.0
16
3.9
31
-55 to +150
A
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient
Junction to Ambient
(a)
(b)
R θ JA
R θ JA
62.5
32.2
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width limited by maximum junction temperature.
ISSUE 4 - JULY 2003
SEMICONDUCTORS
2
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